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PCC99, Phase Change with Convection: modelling and validation
June 24-26, 1999
European Science Foundation, Applied Mathematics for Industrial Flow Problems
Warsaw, Poland

Organizers
Tomasz Kowalewski, Fulvio Stella, Jerzy Banaszek, Janusz Szmyd

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Numerical simulation of a semiconductor floating zone
by
Burkhard Höhn
Institut für Angewandte Mathematik, Universität Freiburg, GERMANY
Coauthors: Eberhard Bänsch (Zentrum für Technomathematik, Universität Bremen, GERMANY)

We present numerical results concerning the simulation of semiconductor melts with free capillary surfaces, particularly silicon crystal growth by the floating zone method. Considering the solid/liqid interface as fixed such a simulation requires the computation of the moving capillary surface of the melting zone. The mathematical model is a coupled system which consists of a heat equation and the Navier-Stokes equations in the melt with a Marangoni boundary condition. We describe an efficient numerical method for solving this problem and give some results for different physical parameters.

Date received: April 16, 1999

Copyright © 1999 by the author(s). The author(s) of this document and the organizers of the conference have granted their consent to include this abstract in Atlas Conferences Inc. Document # caco-31.