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International Conference on Mathematical Modeling and Scientific Computing
April 2-6, 2001
Middle East Technical University and Selcuk University
Ankara and Konya, Turkey

Organizers
F. Bornemann (Munich University of Tecnology, Germany), H. Bulgak (Selcuk University, Konya, Turkey), V. Ganzha (Munich University of Technology, Germany), B. Karasozen (METU, Ankara, Turkey), A. Sinan (Selcuk University, Konya, Turkey), C. Zenger (Munich University of Technology, Germany)

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Computational modelling of crystal growth and semiconductor thin film deposition
by
Lev Kadinski
Institute of Fluid Mechanics, University of Erlangen--Nurnberg, Erlangen, Germany
Coauthors: F.Durst, M.Breuer, S.Enger, P.Kaufmann, M.Selder (Institute of Fluid Mechanics, University of Erlangen--Nurnberg, Erlangen, Germany)

Recent progress in computer power and parallel developments in numerical methods have helped to advance computational fluid dynamics (CFD). As a rough estimate the performance of the most powerful supercomputers is steadily increasing one order of magnitude in an interval of five years. For many fields of engineering computers and computer codes have now become available to apply CFD in order to solve practically relevant problems. The modelling results have been proved to be sufficiently accurate to yield reliable numerical predictions. Therefore, CFD has become an excellent tool to gain results of simulations that can support industrial developments. A large field of applications is arising in the semiconductor industries.

In this paper an advanced numerical approach for the simulation of crystal growth and semiconductor thin film deposition is presented. The mathematical model is based on the conservation equations for momentum and heat transfer combined with mass transfer including thermodiffusion and chemical reactions. The radiation heat transfer modelling approach is based on the exchange of radiative heat fluxes between the internal solid surfaces in the computational domain using diffuse view-factors. The radiation heat transfer is coupled with convection and conduction. The heat conduction includes thermal solid/fluid interactions between the gas and solid parts.

The model is implemented in a efficient multigrid finite volume numerical solution procedure (FASTEST) on block-structured non-orthogonal grids for two- and three-dimensional incompressible or low Mach number flows. The three-dimensional code (FASTEST 3D) is highly optimized for both vector computers and parallel-vector systems. In order to demonstrate the ability of the present method to analyse complex problems the investigations of chemical vapour deposition (CVD), the physical vapor transport (PVT) of SiC bulk growth process, and the Czochralski (CZ) process for the growth of Si monocrystals are presented.

Date received: February 21, 2001

Copyright © 2001 by the author(s). The author(s) of this document and the organizers of the conference have granted their consent to include this abstract in Atlas Conferences Inc. Document # cagk-74.