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Pressure across the free surface of a stable static meniscus in a possible Ge(1-X)Si(X) ribbon growth by edge-defined film-fed growth (E.F.G.) technique
by
Agneta Balint
West University of Timisoara, Faculty of Physics, Bulv.V.Parvan 4, Timisoara, Romania
Coauthors: Robert Szabo
West University of Timisoara, Department of Computer Science
In this paper the limits of the pressure difference across the free surface which have to be used to obtain a stable convex static meniscus with a prescribed size in the case of a Ge1-XSiX single crystal ribbon growth by E.F.G. technique are found. The dependence of these limits on the composition X is analyzed. The same tools as for a Ge or Si single crystal ribbon growth are used. The results can be useful in a future experiment or manufacturing technology design.
Date received: March 25, 2008
Copyright © 2008 by the author(s). The author(s) of this document and the organizers of the conference have granted their consent to include this abstract in Atlas Conferences Inc. Document # cawz-77.