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Host: Doshisha University, Imadegawa Campus
Homepage: http://iccg.gakushuin.ac.jp/
Email: info@iccg.doshisha.ac.jp
Deadline for abstracts: January 15, 2001
Description:
As this is the first International Crystal Growth Conference in the 21st Century, we chose the range of scope to be
"Future Challenges for Crystal Growth".
New developments in crystal growth science and technology will be reported
and discussed in the plenary, general, and topical sessions, as well as the award speeches. There will also be a film and
video session, a commercial exhibit, a photo contest, and a display of crystals and crystal-growth related devices. The
topics will include, but are not limited to the standard ones: crystal growth theory, bulk crystal growth, thin film growth and
epitaxy, crystal growth under microgravity, industrial crystallization, protein crystal growth, pattern formation; and also
topical sessions on nanostructure fabrication, fundamentals of melt growth, new magnetic semiconductor crystals, and
new developments in wide gap semiconductors such as nitrides, SiC, and diamond. ICCG-13 and ICVGE-11 will offer
excellent opportunities for crystal growth scientists and engineers to learn about recent developments in crystal growth
science and technologies.
Mail Address:
Secretariat of ICCG-13/ICVGE-11 c/o Faculty of Engineering Doshisha University Kyotanabe-city, Kyoto, 610-0321, Japan Tel 81-774-65-6329 Fax 81-774-65-6811
Date received: October 29, 2000
© 2008 Atlas Conferences Inc.